| 摘要 |
<p>An epitaxial silicon wafer which comprises a silicon wafer produced by a method characterized as comprising pulling up a silicon single crystal under a condition wherein when an oxygen concentration is 7 x 1017 atoms/cm3 a nitrogen concentration is about 3 x 1015 atoms/cm3 or less, and when an oxygen concentration is 1.6 x 1018 atoms/cm3 a nitrogen concentration is about 3 x 1014 atoms/cm3 or less, and, an epitaxial film formed on the wafer. The epitaxial film, being formed on such a wafer, has crystal defects, which are observed as LPD of 120 nm or more on the epitaxial film, in a range of 20 pieces/200 mm wafer or less. The epitaxial silicon wafer contains nitrogen atoms doped therein and also has satisfactory characteristics as that for use in a semiconductor device.</p> |
