| 摘要 |
A semiconductor device (100), in accordance with the present invention, includes a substrate (102) having trenches (104) formed therein. The trenches extend in a first direction, and the first direction is substantially parallel to a top surface of the substrate. Each trench includes a bottom portion (118), and the bottom portion has a bottom surface (122) transversely disposed relative to the top surface of the substrate. The bottom portion is formed in communication with the trench. An addressing line (128) is formed adjacent to the bottom surface such that an effective width of the addressing line is a distance along the bottom surface between side walls of the trench and the distance is greater than a width of the trench. A method for fabricating the semiconductor device with V-shaped notches is also disclosed. |
