发明名称 |
Insulated gate field-effect transistor and method of making the same |
摘要 |
<p>A withstand voltage region of a second conductivity type is formed in a drain layer of a first conductivity type in a semiconductor substrate, and a conductive region of the first conductivity type is partly formed in the withstand voltage region by being diffused from the surface of the withstand voltage region. The conductive region has a bottom held in contact with the drain layer. A base region and a source region are formed in the surface of semiconductor substrate, with a region between the source region and the conductive region serving as a channel region, thus producing a transistor. When a voltage is applied to a gate electrode film on the channel region to form an inverted layer, the source region and the drain layer are connected to each other by the inverted layer and the conductive region. <IMAGE></p> |
申请公布号 |
EP1081768(A2) |
申请公布日期 |
2001.03.07 |
申请号 |
EP20000117727 |
申请日期 |
2000.08.17 |
申请人 |
SHINDENGEN ELECTRIC MANUFACTURING COMPANY, LIMITED |
发明人 |
NAKAMURA, HIDEYUKI |
分类号 |
H01L29/10;H01L21/336;H01L29/06;H01L29/08;H01L29/423;H01L29/739;H01L29/78;(IPC1-7):H01L29/78;H01L29/36 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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