发明名称 FILM FORMING METHOD AND FILM FORMING DEVICE
摘要 PROBLEM TO BE SOLVED: To form a BST film having higher quality. SOLUTION: In a shower chamber 106, source gas and a trace amt. of oxidizing gas are mixed, and premix gas obtd. by mixing the source gas and oxidizing gas is fed to the surface of a substrate 103 from a premix gas discharging port 108. Then, by discharging a large quantity of oxidizing gas from an another oxidizing gas discharging port 109, this large quantity of oxidizing gas and the premix gas discharged to the surface of the substrate 103 are mixed on the substrate 103.
申请公布号 JP2001059176(A) 申请公布日期 2001.03.06
申请号 JP19990234209 申请日期 1999.08.20
申请人 TOKYO ELECTRON LTD 发明人 RYU OKUGUN;JINRIKI HIROSHI;MAGARA TAKASHI
分类号 H01L21/31;C23C16/40;C23C16/44;C23C16/448;C23C16/455;H01L21/20;H01L21/316;H01L21/8242;H01L27/108 主分类号 H01L21/31
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