发明名称 |
Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece |
摘要 |
A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.
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申请公布号 |
US6197181(B1) |
申请公布日期 |
2001.03.06 |
申请号 |
US19980045245 |
申请日期 |
1998.03.20 |
申请人 |
SEMITOOL, INC. |
发明人 |
CHEN LINLIN;TAYLOR THOMAS |
分类号 |
H01L21/288;H01L21/768;H05K3/42;(IPC1-7):C25D5/02;H01L21/445 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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