| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method and device for producing an X-ray mask by which the starting point and end point of etching are detected with high precision even in the case the etching area is very small, the reproducibility of the etching in the producing process of the X-ray mask is enhanced, and the formation of patterns high in precision is realized. SOLUTION: The method for producing an X-ray mask comprises at least a stage in which a light receiving means monitoring the light emitting intensity of plasma in an etching chamber is arranged, the light emitting of chemical seed in the plasma is dispersed and detected, the signal of the light emitting intensity of the chemical seed in the plasma is subjected to a set calculating treatment, and the starting point and end point of the etching are discriminated and a stage in which, after the passage of a prescribed time after the starting or end point of the etching, the etching conditions are changed or the etching is stopped.</p> |
