| 摘要 |
PROBLEM TO BE SOLVED: To aim at preventing the generation of a deformation of a resist film, a breakage in the resist film or the like due to the peel of the resist film. SOLUTION: In this forming method of connection holes, the positions of contact holes, which are formed on a silicon substrate 11, are decided, and the contact holes formed at the positions decided at the interval shorter than 3.6μm among the positions out of these decided positions of the contact holes are thinned out, whereby the positions, which are decided at an interval shorter than 3.6μm among the positions, of the contact holes are eliminated, an insulating film 13 is formed on the substrate 11, and a resist film 15 having apertures at the above positions is formed on the film 13. The film 13 is dry-etched, using the film 15 as a mask, and the film 13 is wet-etched using the film 15 as a mask, whereby the contact holes 13a to 13d are formed at the positions in the film 13.
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