| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which protects a MOS capacitor provided at the input side of an inner circuit against damages and is enhanced in electrostatic breakdown strength, when static electricity is discharged through a device charged model. SOLUTION: This device is equipped with an inner circuit 20, where external signals are inputted, an inner circuit MOS capacitor 16 whose one end is connected to a power supply wiring 10, which supplies a power supply voltage and other end is connected to a ground potential wiring 12 which supplies a ground potential, a ground terminal 14 whose one end is connected to the ground potential wiring 12, and an electrostatic protective element 18 which is connected in parallel with the MOS capacitor 16 and between the ground terminal 14 and the MOS capacitor 16. At this point, a wiring resistance R1 of a part of the ground potential wiring 12 between the ground terminal 14 and its point connected to the electrostatic protective element 18 is set larger than a wiring resistance R2 of another part of the ground potential wiring 12 between its point connected to the one end of the electrostatic protective element 18 and its other point connected to the other end of the MOS capacitor 16. |
