METHOD FOR MANUFACTURING METAL INTERCONNECTION USING DAMASCENE PROCESS

摘要

PURPOSE: A method for manufacturing a metal interconnection using a damascene process is provided to form a repeatable uniform photoresist layer pattern, by minimizing an effect by misalignment in forming a photoresist layer pattern for fabricating a damascene bit-line contact hole. CONSTITUTION: An insulating layer covering a semiconductor device is formed on a substrate(40). A trench(50) is formed in the insulating layer between the devices. An etch stop layer(52) is formed on the entire surface of the insulating layer. An applying material layer for planarization for filling the trench is formed on the etch stop layer. A contact hole penetrating the bottom of the trench and exposing the substrate is formed in the material layer composed of the applying material layer, the etch stop layer and the insulating layer. The applying material layer is removed. A metal interconnection(60a) connected to the substrate is formed in the contact hole and the trench.