METHOD FOR MANUFACTURING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact hole of a semiconductor device is provided to reduce resistor-capacitor delay time of a transistor, by forming a butting contact hole for connecting a gate and a metal interconnection on a gate on both sides of a channel region. CONSTITUTION: A transistor has a gate(52) of a structure in which an interlayer dielectric is formed between the first conductive layer and the second conductive layer. Respective butting contact holes(54a,54b) are formed on a gate which is extended to both sides of a channel region. The width of the channel region is not less than 20 micrometer. The butting contact holes are symmetrical to a central point of the gate.