METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to prevent a lifting phenomenon between a TiAlN barrier metal layer and a noble metal layer, by using TiAlN as a barrier metal layer used for preventing diffusion and oxidation. CONSTITUTION: A semiconductor substrate is prepared which has various elements for forming a semiconductor device. A TiAlN barrier metal layer(3) is deposited on the semiconductor substrate. A rapid thermal process is performed in an atmosphere of a small quantity of O2 so that a thin Ti-Al-N-O based oxide layer(4) is forcibly formed on the TiAlN barrier metal layer and an O2 stuffing portion(10) exists in a grain boundary. A noble metal layer is deposited on the TiAlN barrier metal layer having the Ti-Al-N-O based oxide layer and the O2 stuffing portion, and is patterned to form a storage electrode(5). A dielectric layer(6) and a plate electrode(7) are formed on the entire structure including the storage electrode.