发明名称 Electro-optical microelectronic arrangement used as a transistor, diode or capacitor comprises a metallizing plane on an integrated semiconductor circuit system
摘要 Electro-optical microelectronic arrangement containing electronic components and light-emitting components connected together comprises a metallizing plane on an integrated semiconductor circuit system (20). Electrodes (22, 23) for light-emitting components based on semiconducting organic materials are formed in this plane. A layer of semiconducting organic material (21) is provided on the metallizing plane. An Independent claim is also included for a process for the production of the electro-optical microelectronic arrangement comprising applying a metallizing plane on an integrated semiconductor circuit system to form contacts in the plane, applying a semiconducting organic material on the plane and structuring. Preferred Features: The integrated semiconductor circuit system is a system based on polysilicon or amorphous silicon on a glass support. The semiconducting organic material is a conjugated polymer or oligomer.
申请公布号 DE19935823(A1) 申请公布日期 2001.03.01
申请号 DE1999135823 申请日期 1999.07.29
申请人 INFINEON TECHNOLOGIES AG 发明人 ROESNER, WOLFGANG;RISCH, LOTHAR
分类号 H01L27/32;H01L51/52 主分类号 H01L27/32
代理机构 代理人
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