发明名称 |
Electro-optical microelectronic arrangement used as a transistor, diode or capacitor comprises a metallizing plane on an integrated semiconductor circuit system |
摘要 |
Electro-optical microelectronic arrangement containing electronic components and light-emitting components connected together comprises a metallizing plane on an integrated semiconductor circuit system (20). Electrodes (22, 23) for light-emitting components based on semiconducting organic materials are formed in this plane. A layer of semiconducting organic material (21) is provided on the metallizing plane. An Independent claim is also included for a process for the production of the electro-optical microelectronic arrangement comprising applying a metallizing plane on an integrated semiconductor circuit system to form contacts in the plane, applying a semiconducting organic material on the plane and structuring. Preferred Features: The integrated semiconductor circuit system is a system based on polysilicon or amorphous silicon on a glass support. The semiconducting organic material is a conjugated polymer or oligomer. |
申请公布号 |
DE19935823(A1) |
申请公布日期 |
2001.03.01 |
申请号 |
DE1999135823 |
申请日期 |
1999.07.29 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ROESNER, WOLFGANG;RISCH, LOTHAR |
分类号 |
H01L27/32;H01L51/52 |
主分类号 |
H01L27/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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