Method of monitoring a patterned transfer process using line width metrology

摘要

A pattern transfer process in the manufacture of a semiconductor device is monitored. Patterned features (100) formed on a semiconductor layer (102) to be etched are scanned for generating a first amplitude modulated waveform intensity signal (104). The first amplitude modulated waveform intensity signal is sampled to extract a first measurement population of critical dimension measurements. The patterned features are etched and then scanned for generating a second amplitude modulated waveform intensity signal. The second amplitude modulated waveform intensity signal is then sampled to extract a second measurement population of critical dimension measurements, which are then cross-correlated to obtain correlation values of the etching process.