Circuit for generating backbias voltage corresponding to frequency and method thereof for use in semiconductor memory device

摘要

Backbias voltage generation circuit corresponding to the frequency of a chip control signal is disclosed. The circuit includes a normal driving unit, an active driving unit and a level detecting unit. The level detecting unit detects whether a backbias voltage VBB is equal to or higher than a target voltage level. A normal control signal DETN is activated to enable the normal driving unit, and an active control signal DETA is activated to enable the active driving unit. The normal driving unit pumps down the backbias voltage VBB independent of the chip control signal CONC. The active driving unit includes a counter circuit and an active pumping unit. The counter circuit generates first and second edge detecting signals FED and RED in response to an activating edge of the chip control signal CONC. The active pumping unit pumps down the backbias voltage VBB, when the first edge signal FED or second edge signal RED is activated.