| 摘要 |
<p>PROBLEM TO BE SOLVED: To form support pillars on a support silicon substrate using one alignment mark and to enable the formation of patterns with good accuracy at the prescribed position in small regions constituted of the support pillars on the substrate. SOLUTION: A mask 5 for etching having openings for forming alignment marks is formed on a support silicon substrate 1, and the substrate 1 and a silicon oxide layer 2 are etched in accordance with opening patterns 4 for forming patterns provided in the mask 5 to form a silicon membrane 3a. Subsequently, the opening alignment marks 7 are formed in the membrane 3a, a mask 9 for dry-etching with opening patterns provided at the positions corresponding to support pillar formation positions on the substrate 1 is formed on the substrate 1 using the marks 7, and a support silicon layer is dry-etched in accordance with opening patterns 8 provided in the mask 9.</p> |
