| 摘要 |
PROBLEM TO BE SOLVED: To improve an optical characteristics, especially the aspect ratio of a far-field pattern, for easy application to an optical information equipment while the output characteristics and element reliability are kept well as before. SOLUTION: An n-side optical guide layer 7 of an n-type nitride semiconductor, an active layer 8, and a p-side optical guide layer 9 of a p-type nitride semiconductor are laminated. The p-side optical guide layer comprises a stripe- like protruding part on which a p-type nitride semiconductor layer is provided, with the film thickness of the protruding part of the p-side optical guide layer being 1μm or less, forming a stripe-like waveguide.
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