发明名称 |
Method for in-situ removing photoresist material |
摘要 |
A method for in-situ removing photoresist material. An etching process for patterning a passivation layer of a CMOS photosensor is performed on an etching machine. Oxygen is in-situ used to remove the parched photoresist material. The etching process and the in-situ O2 process are performed, for example, on a Tegal-903 etching machine. The Tegal-903 has better stability than an Asher etching machine for removing the parched photoresist material using oxygen plasma. A stable etching rate is thus obtained to prevent the acrylic material layer from being damaged by over-etching and to prevent the photoresist material from remaining.
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申请公布号 |
US6194324(B1) |
申请公布日期 |
2001.02.27 |
申请号 |
US19990292292 |
申请日期 |
1999.04.15 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHENG LUNG-YI;PAI YUAN-CHI;LI CHENG-CHE;LIN WEI-CHIANG |
分类号 |
H01L21/311;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/311 |
代理机构 |
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地址 |
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