发明名称 Method for making thin film semiconductor
摘要 The present invention provides new and improved methods for making crystalline semiconductor thin films which may be bonded to different kinds of substrates. The thin films may be flexible. In accordance with preferred methods, a multi-layer porous structure including two or more porous layers having different porosities is formed in a semiconductor substrate. A semiconductor thin film is grown on the porous structure. Electrodes and/or a desired support substrate may be attached to the grown film. The grown film is separated from the semiconductor substrate along a line of weakness defined in the porous structure. The separated thin film attached to the support substrate may be further processed to provide improved film products, solar panels and light emitting diode devices. These thin film semiconductors are excellent in crystallinity and may be inexpensively produced, thereby enabling production of solar cells and light emitting diodes at lower cost.
申请公布号 US6194245(B1) 申请公布日期 2001.02.27
申请号 US19990455844 申请日期 1999.12.07
申请人 SONY CORPORATION 发明人 TAYANAKA HIROSHI
分类号 H01L21/205;H01L21/3063;H01L21/762;H01L31/0224;H01L31/0392;H01L31/048;H01L31/075;H01L31/18;H01L33/00;H01L33/34;(IPC1-7):H01L21/00 主分类号 H01L21/205
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