METHOD FOR PLATING METAL IN SUBMICRON STRUCTURE

摘要

PURPOSE: A method is provided to plate a metal in a submicron structure by sticking a seed layer on the surface of a submicron structure, and annealing the seed layer at a specified temperature before a metal is plated on the seed layer. CONSTITUTION: A seed layer(1) is allowed to stick to the surface of submicron structure, and the seed layer(1) is annealed at about 80-130 deg.C. Then a metal is plated on the seed layer(1). The annealing is performed during sticking to the seed layer(1) or after completion of it. The seed layer(1) is allowed to stick by sputtering regardless of whether annealing is performed during sticking of the seed layer(1) or after completion. Annealing is typically performed at about 80-130 deg.C, however, it is performed below 120 deg.C. Any annealing temperature can be controlled to control the resistivity of the formed seed layer(1).