| 摘要 |
PURPOSE: To provide a polishing method which can realize a high speed polishing treatment and the mechanical polishing of the surface of the metal film, and is useful for forming a built-in metal wiring of semiconductor device or the like, by using a specific polishing liquid. CONSTITUTION: This polishing method uses a polishing liquid comprising (A) an oxidizing substance (preferably hydrogen peroxide), (B) a substance (preferably an organic acid or its salt, especially a hydroxycarboxylic acid, concretely malic acid or citric acid) for dissolving the oxidized substances in water, (C) a thickening agent (preferably polyacrylic acid, especially ammonium polyacrylate or a polyacrylic acid amine salt which has a mol.wt. of >=10,000 and a viscosity of =<100 cP in a state of a 1 wt.% aqueous solution), and (D) water. The viscosity of the polishing liquid is preferably >=10 cP, and the metal film preferably contains copper, an alloy containing copper as a main component, or a copper compound.
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