| 摘要 |
PURPOSE: To obtain a method for manufacturing a solid-state image pickup element and a solid-state image pickup element which can spread a photoelectric transfer region by forming an overflow barrier layer at a deep position, and also prevents generation of radioactive rays caused by using a resist as a mask. CONSTITUTION: When manufacturing a solid-state image pickup element having a vertical type overflow drain structure, ions are implanted on the entire surface of a silicon substrate 1 without using a resist mask to form an overflow barrier layer 11. Furthermore, a pixel region is enclosed in the peripheral part of the silicon substrate 1, and a trench 21 is formed so as to separate the overflow barrier layer 11 into the pixel region and its outer peripheral part, and a conductive type impurity diffused layer 22 different from the overflow barrier layer 11 may be formed in the inner wall part of the trench 21.
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