| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a wiring layer can be formed while fine holes and trenches for wiring are favorably filled in with a small number of easy processes. SOLUTION: A plurality of films are formed on a surface of a semiconductor device material 10 having an insulating layer 26 with a recessed portion 24 formed on its surface. This method of manufacturing a semiconductor device has the steps of forming an undercoat metallic film 28 containing high melting point metal on a surface of the insulating layer including the inner peripheral surface of the recessed portion, treating a surface of the undercoat metallic film 28 with an organic solvent having an OH group, and depositing metal for wiring 34 on the surface treated undercoat metal film 28 by CVD so that at least a part or the whole of the recessed portion is filled in. Consequently, a wiring layer can be formed while fine holes and trenches for wiring are favorably buried with a small number of easy processes.
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