| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device having a capacitor of a structure, wherein the insulation characteristics between information shortage electrodes of a cylinder structure are modified. SOLUTION: A first silicon film 10 is filled in first apertures 4, provided in second interlayer isulating films 2a and 2b on a semiconductor substrate 1, and moreover, after third and fourth interlayer insulating films 2c and 2d are deposited on the entire surface, second apertures 11 to reach from the surface of the film 2d to the surface of the film 10 are formed, subsequently, a second silicon film 12 is formed on the entire surface and after a photoresist 13 is filled in the aperturees 11, the film 12 is etched back to leave the film 12 only in the apertures 11, and moreover, after the upper end surface of the film 12 is subjected to a plasma treatment using a photoresist 13 as a protective film, an HSG-Si film 14 is grown on the surface of the film 12 to form a capacitor lower electrode. |
