| 摘要 |
<p>A method of manufacturing an integrated circuit including adjusting a parameter of the operation of the integrated circuit, such as power dissipation, after prototype testing by changing only one mask. If prototype testing indicates that performance specification for power dissipation, for example, is not met, the power dissipation can be adjusted by changing the size of the active areas (123, 125) to change the channel width of the gates (134, 136) of the circuit, by changing the size of the patterns (304, 306) of the active area masks (302). The decrease power dissipation, the size of the active area (123, 125) is decreased. Only the active mask need be changed. Preferably, the active area around the original contacts are maintained so that the positions of the contacts (440) need not be changed. Consequently, the mask for defining the position of the contacts and the masks for defining the metallization layers need not be changed. To increase power dissipation, the size of the active areas (123, 125) is increased. The values of other parameters may be changed, as well.</p> |
