METHOD FOR FABRICATION OF ENLARGED STACKED DRAM CAPACITORS

摘要

In accordance with the present invention, a method for expanding holes for the formation of stacked capacitors is described and claimed. The method includes the steps of providing a planarized dielectric layer (120) for forming bottom electrodes of the stacked capacitors, forming a first dielectric layer (130) on the planarized dielectric layer, forming a second dielectric layer (132) on the first dielectric layer. The second dielectric layer is selectively etchable relative to the first dielectric layer. The steps of etching the second dielectric layer to form holes (134) for forming the bottom electrodes and isotropically etching the second dielectric layer to expand the holes for forming the bottom electrodes are also included.