| 发明名称 |
THIN-FILM INTEGRATED CIRCUIT MANUFACTURING METHOD |
| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an active matrix liquid crystal display device which has flexibility. SOLUTION: A thin-film transistor is formed on a glass substrate 101 and is bonded with a resin substrate 120, which has a light transmission property via a sealing layer 119 made of acrylic resin and so on and has flexibility. The constitution of the thin-film transistor formed on the resin substrate 120 having a flexibility is obtained by peeling the glass substrate 101. Thus a panel for an active matrix liquid crystal display device, using the resin substrate having flexibility, can be obtained.</p> |
| 申请公布号 |
JP2001044445(A) |
申请公布日期 |
2001.02.16 |
| 申请号 |
JP20000195959 |
申请日期 |
2000.06.29 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI;TERAMOTO SATOSHI |
| 分类号 |
G02F1/13;A42B3/22;G02F1/1333;G02F1/136;G02F1/1368;G09F9/30;H01L21/02;H01L21/20;H01L21/265;H01L21/336;H01L21/77;H01L27/12;H01L27/32;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/13 |
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