| 摘要 |
PROBLEM TO BE SOLVED: To form a field-effect transistor with a gate insulating film thickness equal to or below a specific value in terms of Si oxide film-converted film thickness by forming a laminated film of a silicon nitride film and tungsten- titanium mixed oxide or tungsten-zirconium mixed oxide as a gate insulating film on a single crystal silicon substrate. SOLUTION: An element isolation region 210 of STI structure is formed on a n-type single crystal silicon substrate 201. A silicon nitride film 204, 1 nm or so in film thickness, is formed on a channel region 203, and a WTO film (Ti/(W+Ti)=0.2) 205, 12 nm or so in film thickness, is formed thereon. A gate electrode 206 is formed on the metal oxide insulating film 205 through self alignment to source-drain regions 202. Source-drain electrodes 207, electrically connected with the respective source-drain regions 202 through contact holes formed in a layer insulating film 208, are formed. The silicon film- converted film thickness of the gate insulating film is not larger than 1.0 nm.
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