发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To enable fluctuation reduction and enhance reliability by radiating the pulse laser beam having a cross-section extended only in one direction to an island type semiconductor film while a substrate is moved in the direction vertical to one direction. SOLUTION: An optical beam is amplified by an amplifier 3 via total reflection mirrors 5, 6 and is then guided to an optical system 4 via total reflection mirrors 7, 8. The initial laser beam has the rectangular cross-section of about 3×2 cm2 but the laser beam is then processed with this optical system 4 to a narrower beam in the length of 10 to 30 cm and in the width of about 0.1 to 1 cm. Such a narrower beam is effective to improve processability. That is, the narrower beam is radiated to a sample 11 via the total reflection mirror 9 after leaving the optical system 4. But, since the width of the beam is larger than the width of sample, it is enough that the sample is moved only in one direction. Therefore, the sample stage and drive apparatus 10 are formed in the simplified structure and assures simplified maintenance.
申请公布号 JP2001044131(A) 申请公布日期 2001.02.16
申请号 JP20000207589 申请日期 2000.07.07
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;CHO KOYU
分类号 H01L21/20;B23K26/00;B23K26/06;B23K26/067;B23K101/40;C23C14/58;C23C16/56;G02B13/00;G02B27/09;G02F1/00;G02F1/35;H01L21/00;H01L21/02;H01L21/26;H01L21/265;H01L21/268;H01L21/322;H01L21/324;H01S3/00;H01S3/09;H01S3/097;H01S5/024;(IPC1-7):H01L21/265 主分类号 H01L21/20
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