METHOD FOR FORMING ISOLATION REGION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an isolation region is to simplify a manufacturing process and to resolve the problems according to a corner profile of a semiconductor device, so as to eliminate a CMP process and to reduce manufacturing cost. CONSTITUTION: A forming method of an isolation region comprises the steps of: forming an insulating layer on a semiconductor substrate(21); selectively removing the insulating layer to form a plurality of spaced insulating layer patterns; and forming a doped epitaxial layer(24) between the insulation patterns, the insulating layer being formed in depth of 3000 to 8000 angstrom, an annealing process being further implemented in the temperature of 850 to 950 deg. C for 10 to 40 minutes, the insulating layer pattern being formed at 75 to 90 degree to the semiconductor substrate, and the epitaxial layer being formed in depth of 3000 to 8000 angstrom.