发明名称 |
Method for forming a barrier metallization layer |
摘要 |
A method for forming a barrier metallization layer upon a semiconductor substrate. A semiconductor substrate is provided which has formed upon its surface a barrier metallization layer. The barrier metallization layer has formed in-situ upon its surface a silicon layer. The silicon layer has a thickness such that the contact resistance of the barrier metallization layer is not substantially increased. In a further embodiment, the barrier metallization layer and the silicon layer are sintered to form a metal silicide layer upon the surface of the barrier metallization layer.
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申请公布号 |
US6187664(B1) |
申请公布日期 |
2001.02.13 |
申请号 |
US19950498357 |
申请日期 |
1995.06.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
YU CHEN-HUA D. |
分类号 |
H01L21/285;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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