| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which can prevent a gate oxide film from being broken even if the antenna ratio is high and also can ensure the high throughput of the device, and a plasma insulating film depositing device which is used for the manufacturing method. SOLUTION: A high-frequency electric field HRF and a low-frequency electric field LRF are applied in a chamber as the flow rate of TEOS(Tetra Ethyl Ortho Silicate) gas is held at a flow rate of 30 (sccm). The outputs of the electric fields HRF and LRF at this time are respectively 60 (W) and 150 (W), for example. In these periods, a deposition of a first step plasma oxide film is performed (periods 1 to 3). Then the electric fields HRF and LRF are again applied in the chamber as the flow rate of the TEOS gas is held at a flow rate of 120 (sccm), for example. The outputs of the electric fields HRF and LRF at this time are respectively 380 (W) and 300 (W), for example. In these periods, a deposition of a second step plasma oxide film is performed (periods 1 to 6).
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