发明名称 FORMATION OF PATTERN AND EXPOSURE DEVICE
摘要 PROBLEM TO BE SOLVED: To make it possible to execute pattern formation by evading the defect points of a mask blank, to improve the yield of production and to enable the efficient utilization of the mask blank. SOLUTION: In the pattern formation method for forming the mask patterns on the mask blank by exposing the desired patterns to the main surface of the mask blank for formation of a mask for exposure and, position measurement marks are respectively previously formed at the corners of the opposite angle of the main surface of the mask blank and the defects 75 of the main surface of the mask blank are detected. The relative positions of the positions of the detected defects 75 and the mask patterns 73 to be formed on the mask blank are compared. The pattern positions are so selected that the defects 75 overlap on the patterns 73 and thereafter, the position measurement marks are measured and the exposure positions are calculated. The selected portions are subjected to exposure processing.
申请公布号 JP2001033941(A) 申请公布日期 2001.02.09
申请号 JP19990203050 申请日期 1999.07.16
申请人 TOSHIBA CORP 发明人 TOKAWA IWAO
分类号 H01L21/027;G01B11/00;G01B11/14;G01N21/00;G01N21/88;G03B27/42;G03F1/36;G03F1/52;G03F1/68;G03F1/76;G03F1/78;G03F7/20 主分类号 H01L21/027
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