CRYSTALLINE SEMICONDUCTOR THIN FILM AND MANUFACTURE THEREOF, AND SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a technique for forming a single-crystal semiconductor thin film or a substantially single-crystal semiconductor thin film. SOLUTION: An amorphous semiconductor thin film is irradiated with ultraviolet light or infrared light, so as to obtain a crystalline semiconductor thin film 102. The crystalline semiconductor thin film 102 is subjected to heat treatment at 900-1,200 deg.C in a reducing atmosphere. By this process, the surface of the crystalline semiconductor thin film 103 is markedly planarized, and defects in grain boundaries or crystal grains are eliminated and thus a single-crystal semiconductor thin film or a substantially single-crystal semiconductor thin film is obtained.