| 摘要 |
PROBLEM TO BE SOLVED: To attain low power consumption without lowering the operation speed at a low voltage by electrically connecting to a gate a semicondctor region, where a channel is formed, when at least one of MOS transistors, the gate of which the signal of an amplitude corresponding to that of an input signal out of the plural MOS transistors is inputted to, is turned on. SOLUTION: An internal voltage VDD or an input signal A at a ground GND level is applied to a circuit, which used N/PMOS transistor (NDT1 to 3/PDT1, P1 and P2). As a result of this, the output of an inverter circuit IV1 becomes the ground GND or the internal voltage VDD level, a transistor NDT 2 is turned on or off, and a transistor NDT 3 is turned off or on, a node 1 or 2 reaches the ground GND level, and the transistors P1 and P2 operate. The transistors NDT1 to 3 and a PDT1 electrically connect a semiconductor region, where a channel is formed when the transistors are on or off, and a gate.
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