METHOD FOR MANUFACTURING ETCH MASK OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an etch mask of a semiconductor device is provided to prevent a characteristic of a gate oxide layer from being degraded by a silicon-rich nitride layer, by reducing NH4Cl particles caused by SiH2Cl2 and by improving an in-wafer uniformity and a disposition uniformity. CONSTITUTION: A pad oxide layer is formed on a semiconductor substrate. The silicon-rich nitride layer is formed on the pad oxide layer by a low pressure chemical vapor deposition(LPCVD) method, wherein the silicon-rich nitride layer is formed by using at least two different silicon source gases.