| 摘要 |
PURPOSE: A method for manufacturing a gate of a semiconductor device is to provide a more precise critical dimension, by reducing the quantity of an oxygen radical and by using thicker C-N coupling polymer to protect the sidewall of photoresist so that etch selectivity of an anti-reflective coating(ARC) regarding the photoresist can be guaranteed. CONSTITUTION: A gate oxide layer, a gate electrode, the ARC and a photoresist pattern are sequentially formed on a semiconductor substrate to prepare a target wafer(23). A pretreated wafer in which a silicon layer and the photoresist are stacked is placed on the lower electrode(22) of a chamber wherein the ARC is etched, and CF-based gas is injected to the chamber. A radio frequency power is applied to the upper electrode(21) and the lower electrode of the chamber to form CFx-based polymer(20) on the wall of the chamber. The pretreated wafer is eliminated, and N2/O2 gas(24) is injected while the target wafer is placed on the lower electrode of the chamber. A radio frequency power is applied to the upper electrode and the lower electrode to etch the ARC along the photoresist pattern. The gate electrode and the gate oxide layer are etched along the photoresist pattern.
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