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发明名称
Method for manufacturing semiconductor device
摘要
<p>먼저, 얼라인먼트 마크가 형성된 반도체 기판 상에 도전층을 형성한다. 그런 후, 도전층의 배선층이 형성될 영역 및 얼라인먼트 마크 상에 포토레지스트를 선택적으로 형성한다. 그리고, 이 포토레지스트를 마스크로 이용하여 도전층을 에칭한다.</p>
申请公布号
KR100281213(B1)
申请公布日期
2001.02.01
申请号
KR19990004845
申请日期
1999.02.11
申请人
null, null
发明人
고무로마사히로
分类号
H01L21/3205;H01L21/027;H01L23/544
主分类号
H01L21/3205
代理机构
代理人
主权项
地址
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