发明名称 |
Rapid anodic process for producing chalcopyrite compounds |
摘要 |
<p>A multiple step process to produce chalcopyrite compounds of the type, Cu(In<SB>x</SB> Ga<SB>1-x</SB>)( Sy Se<SB>1-y</SB>)<SB>2</SB>, (e.g. CuInS<SB>2</SB> or CuInSe<SB>2</SB>) involves depositing precursor layers of the metallic elements as stacked elemental layers or alloys of the elements followed by electrochemical conversion of the precursor layers into the chalcopyrite compound or alloy. The process involves the anodic sulphidisation or selenisation of the layers by passing an electric current through a solution of selenide/sulphide salts dissolved in an aqueous alkaline or neutral solution or an organic solvent. Annealing is used to complete the chemical reaction(s) to form the chalcopyrite compound and to improve the physical properties of the layers.</p> |
申请公布号 |
GB0030734(D0) |
申请公布日期 |
2001.01.31 |
申请号 |
GB20000030734 |
申请日期 |
2000.12.16 |
申请人 |
INSTITUTE FOR CANCER RESEARCH;UNIVERSITY OF NORTHUMBRIA AT NEWCASTLE |
发明人 |
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分类号 |
C25D9/06;C25D11/02;H01L31/032 |
主分类号 |
C25D9/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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