发明名称 |
MEMORY ELEMENT AND METHOD FOR PROVIDING BIAS IN MEMORY ELEMENT |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide bias to a plurality of memory sectors in a memory element by bulk of a smaller region in a non-volatile memory element of especially a flash type and providing method for bias in a memory element. SOLUTION: A memory element 21 having a plurality of memory sectors 15 each sector of which includes a plurality of memory cells 1 is provided with a hierarchical sector decoding means. One group out of a plurality of groups of bias lines 28-32 is provided to each sector row, and is extended in parallel to a sector row. Each of a plurality of sector switching stages 35 is connected between a corresponding memory sector and a group corresponding to a bias line. A sector switching stage connected to memory sectors arranged in the same sector column is controlled by the same control signals S0, S1 supplied to a control line 40 extending in parallel to a sector column.</p> |
申请公布号 |
JP2001028197(A) |
申请公布日期 |
2001.01.30 |
申请号 |
JP20000196290 |
申请日期 |
2000.06.26 |
申请人 |
STMICROELECTRONICS SRL |
发明人 |
MICHELONI RINO;ZAMMATTIO MATTEO;CAMPARDO GIOVANNI |
分类号 |
G11C16/06;G11C8/12;G11C16/12;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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