MANUFACTURE OF SEMICONDUCTOR DEVICE, MANUFACTURE OF OPTOELECTRONIC DEVICE AND THE SEMICONDUCTOR DEVICE AND THE OPTOELECTRONIC DEVICE MANUFACTURED THEREBY

摘要

PROBLEM TO BE SOLVED: To obtain an optoelectronic device which exhibits no display defects and hence good display performance, in a method of manufacturing an optoelectronic device system subjected to a process step, where ions are implanted using a resist film. SOLUTION: A semiconductor layer 1, a gate insulating film covering the layer 1, and scanning lines 3 on the gate insulating film are arranged on a substrate, after which impurity ions are implanted into the layer 1, using a resist film 406 as a mask. The film 406 has a configuration which covers the lines 3 present in a region, where the lines 3 cross data lines 6 in an image display area. This prevents etching of the lines 3 by a developer used during the formation of the film 406 in advance, whereby an optoelectronic device is obtained, which is free of short circuits between the lines 6 and 3 and display defects.