| 摘要 |
PROBLEM TO BE SOLVED: To obtain an interconnection structure and a method of preparing the same, capable of easily protecting interconnections made of a metal, such as copper which are formed on a substrate. SOLUTION: This method comprises the steps of embedding a conductive metallic material into fine recesses formed in a substrate, such as a semiconductor wafer (step 1), polishing the surface of the metallic material by a mechanical and chemical operation using a working solution (including a polishing solution, a chemical solution and a cleaning solution) from the outermost layer of the buried metal (step 2), whereby an interconnection structure is prepared. During or after the polishing step 2, a chemical conversion treatment is conducted through a contact with an electrolytic solution, either with the surface of the substrate in contact as is with the working solution or immediately after the working solution is removed, whereby the surface of the embedded metallic material is provided with a protective chemical conversion coating.
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