| 摘要 |
PROBLEM TO BE SOLVED: To improve efficiency of light-emission by making a surface on which a light-transmitting electrode is formed a main-light-taking-out surface side. SOLUTION: A board 1 is overlaid with a buffer layer 2, an n-type contact layer 3, a light-emitting layer 4, a p-type clad layer 5 and a p-type contact layer 6, which are comprised of gallium nitride compound semiconductor, in this order, and further the p-type contact layer 6 is overlaid with a light- transmitting electrode 7, and the light-transmitting electrode 7 is overlaid with a p-side electrode 8, and the n-type contact layer 3 with an n-side electrode 9, in this way a gallium nitride compound semiconductor light-emitting element is constituted. In this element, a plurality of recessed parts 11 are formed on the p-type contact layer 6 depressed from the light-transmitting electrode 7 side. Thereby the light that is emitted from the light-emitting layer 4 and propagated in a lateral direction in the light-emitting element is easy to take out from the recessed part 11 to the outside of the light-emitting element, and efficiency of light-emission is improved on the whole. |
