发明名称 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To guarantee the contents of data in an EEPROM under writing even when the operation of a non-volatile semiconductor storage device (non- contact IC card) is interrupted during the execution of write. SOLUTION: A backup area 1-B is provided in a data area 1-A of an EEPROM part 4, un-written data, address information and parity information in the data area 1-A of the EEPROM part 4 are written into the backup area 1-B, and a backup operation control circuit 15 is provided for repairing data in the data area 1-A by referring to data in the data area 1-A and the backup area 1-B when the execution of reloading of data into the data area 1-A is interrupted. Thus, even when the execution of reloading of data is interrupted, data in the data area 1-A can be repaired.
申请公布号 JP2001022653(A) 申请公布日期 2001.01.26
申请号 JP19990196824 申请日期 1999.07.12
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MISUMI KENJI;HATAKEYAMA SHINICHI
分类号 G06F12/16;G06K19/07 主分类号 G06F12/16
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