| 摘要 |
PROBLEM TO BE SOLVED: To eliminate a need of the working operation of a translucent region to GaP contact layers when light emitting elements are arranged at high density and to arrange the light emitting elements with high accuracy in an array shape, by a method wherein the GaP contact layers which are transparent with reference to a light emitting wavelength are formed in the light emitting elements. SOLUTION: This light emitting element array is constituted in such a way that a plurality of light emitting elements 9 in which contact layers 6, with which discrete electrodes 8 are brought into ohmic contact, are provided in the outermost part are arranged on a GaAs substrate 1 in an array shape in a prescribed arrangement direction. In the light emitting element array, the contact layers 6 are transparent with reference to a light emitting wavelength from active layers 4. As a result, when the discrete electrodes 8 are brought into ohmic contact with prescribed positions, prescribed translucent regions are formed. Consequently, an etching and working operation whose accuracy is limited is not required as different from a case in which GaAs is used for the contact layers, and the transluscent region can be formed with high accuracy. |
