| 摘要 |
PURPOSE: To provide a memory device and in which an erroneous write is not generated and whose reliability is high. CONSTITUTION: In a memory device which is constituted by arranging plural memory cells, when a read word line rdword 0 and a write word line wrword 0 are wired in an adjacent relation, pull-down transistors 21, 22 are connected to the write word line wrword 0. When the read word line rdword 0 of data becomes to be at a high level for a period when data are to be read out from memory cells, the pull-down transistors 21, 22 are turned ON and the write word line wrword 0 is fixed at a low level. As a result, when the read word line rdword 0 becomes to be at the high level, since only a minute coupling voltage is generated on the write word line wrword 0 and the voltage is equal to or smaller than the threshold voltage of a transfer gate 1 for writing memory cells, this transfer gate is never turned ON and the erroneous write is not generated.
|
