发明名称 ULTRA-RUGGED I.C. SENSOR AND METHOD OF MAKING THE SAME
摘要 <p>An ultra-rugged biometric integrated circuit sensor and method for constructing the same is provided. The sensor comprises a sensing area (221) and a control electronics area (220), and, as result of its construction, the sensor has a topology whereby the sensing area (221) is elevated with respect to the control electronics area (220). In other words, a depression (223) is created on the sensor surface that allows the control electronics to escape damaging impacts by external forces. According to one embodiment, the sensing area (221) and control electronics area (220) are structured such that there is no overlap between either area, except where the sensing area (221) is electrically coupled to the control electronics. According to another embodiment, the sensor further comprises an electric static discharge structure that creates a least resistant path to ground. The electric static discharge structure further protects the control electronics from high voltage surges encountered in normal operation.</p>
申请公布号 WO2001006448(A1) 申请公布日期 2001.01.25
申请号 US2000019227 申请日期 2000.07.13
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