| 发明名称 |
Process for the formation of a collar oxide in a trench in a semiconductor substrate |
| 摘要 |
Polymeric layer is planarized by subjecting it to a chemical mechanical polishing step, selective to a dielectric layer also subjected to chemical mechanical polishing. <IMAGE> |
| 申请公布号 |
EP1071121(A1) |
申请公布日期 |
2001.01.24 |
| 申请号 |
EP20000113999 |
申请日期 |
2000.07.01 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;INFINEON TECHNOLOGIES AG |
发明人 |
FAIRCHOK, CYNTHIA;IBA, JUNIHIRO;NUETZEL, JOACHIM;YANO, HIROYUKI |
| 分类号 |
B24B37/00;C09G1/02;C09K13/00;H01L21/304;H01L21/306;H01L21/3105 |
主分类号 |
B24B37/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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