Semiconductor devices and methods of manufacturing the same

摘要

There is provided a semiconductor device with a highly reliable TFT structure. The insulating films used for a TFT, such as a gate insulating film, a protection film, a base film and an interlayer insulating film, are formed, by a sputtering method, of a silicon nitride film containing 0.1-50 atoms% or 1-50 atoms%, preferably 0.1-10 atoms%, of boron. As a result, the insulating films have high thermal conductivity and therefore can prevent degradation due to heat generated when the TFT is on.