| 摘要 |
PROBLEM TO BE SOLVED: To raise the productivity of the manufacture of a Gunn diode and the yield of the manufacture of the Gunn diode. SOLUTION: A first N+ gallium arsenide layer 3 is provided on a germanium substrate 1, an N-type gallium arsenide layer 4 and a second N+ gallium arsenide layer 5 are laminated on this layer 3 in such a way that this layer 3 is exposed, an anode electrode 7 is connected on the exposed part of the above layer 3, and a cathode electrode 6 is connected on the layer 5.
|
