| 摘要 |
PROBLEM TO BE SOLVED: To suppress the characteristic variation of an element by partially exposing the surface of a semiconductor substrate and filling up openings, by selectively growing epitaxial layers by using the partial surfaces of the substrate exposed in the openings as growing crystals, and then, removing a semiconductor layer from the surfaces of epitaxial layers except the openings. SOLUTION: On the surface of a single-crystal semiconductor substrate 1, a thermally oxidized film 2 is formed as an element separating insulating film. Then openings are opened through the film 2 by selectively removing the film 2 from the portions corresponding to element forming areas by using photo- etching and anisotropic etching. Thereafter, the openings are filled up by selectively growing epitaxial layers 3 on the silicon substrate 1 by using the partial surfaces of the substrate 1 exposed in the openings as growing crystals. In addition, a semiconductor layer formed on the surfaces of the epitaxial layers 3 is removed except the openings by etching the surfaces of the epitaxial layers 3 left in the element forming areas.
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